The effect of the recombination mechanisms location on the temperature sensitivity of thin-film photovoltaic cells
Laboratoire Electronique, Informatique, Télécommunication et Energies Renouvelables, Université Gaston Berger, Saint-Louis, Senegal
2 GeePs-CentraleSupelec, Laboratoire de Génie Electrique et Electronique de Paris, Universités de Sorbonne, UPMC Université Paris 06, UMR 8507, 91190 Gif sur Yvette, France
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Received in final form: 10 July 2019
Accepted: 5 September 2019
Published online: 8 October 2019
Thin film solar cells temperature sensitivity and impact of the main recombination mechanism location are investigated in this paper. The main mechanisms in bulk and at the heterojunction interface are discriminated. Using a 1D simulation software, “Solar Cell Capacitance Simulator” (SCAPS), we observed a higher temperature coefficient of open circuit voltage (Voc) for cells with main recombination centers at the interface than the one with main recombination centers in volume. Furthermore, an LTSpice module model is used to visualize the effects of the recombination centers' location on the performance ratios of the modules. The results show more degradation for the ratios performance of cells with the main recombination mechanisms at the interface than those in volume.
Key words: Temperature sensitivity / recombination mechanisms / ratios performance / thin film cells
© N. Kata et al., published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.